DS2760 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated

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DS2760

High Precision Li-Ion Battery Monitor

Dallas Semiconductor -> Maxim Integrated 

DS2760

When the internal sense resistor is used, the DS2760 maintains the Current Accumulator in units of Amp-

hours, with a resolution of 0.25 mAhrs and full scale range of ±8.2 Ahrs. When using an external sense

resistor, the DS2760 maintains the Current Accumulator in units of Volt-hours, with a resolution of

6.25 µVhrs and a full scale range of ±205 mVhrs.

The Current Accumulator is a read/write register that can be altered by the host system as needed.

CURRENT ACCUMULATOR FORMAT – Figure 5

MSB—Address 10

S 214 213 212 211 210 29 28

MSb

LSb

LSB—Address 11

27 26 25 24 23 22 21 20

MSb

LSb

Units: 0.25 mAhrs for internal sense resistor

6.25 µVhrs for external sense resistor

CURRENT OFFSET COMPENSATION

CURRENT MEASUREMENT and the CURRENT ACCUMULATION are both internally compensated

for offset on a continual basis minimizing error resulting from variations in device temperature and

voltage. Additionally a constant bias may be utilized to alter any other sources of offset. This bias resides

in EEPROM address 33h in two’s-complement format and is subtracted from each current measurement.

CURRENT OFFSET BIAS – Figure 6

Address 33

S 26

MSb

25 24 23 22 21 20

LSb

Units: 0.625 mA for internal sense resistor

15.625 µV for external sense resistor

VOLTAGE MEASUREMENT

The DS2760 continually measures the voltage between pins VIN and VSS over a range of 0 to 5-volts.

The resulting data is placed in the Voltage Register in two’s-complement format with a resolution of

4.88 mV. Voltages above the maximum register value are reported as the maximum value. The Voltage

Register format is shown in Figure 7.

VOLTAGE REGISTER FORMAT – Figure 7

MSB—Address 0C

S 29 28 27 26 25 24 23

MSb

LSb

LSB—Address 0D

22 21 20 X X X X X

MSb

LSb

Units: 4.88 mV

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