DS2761 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated

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DS2761

High-Precision Li+ Battery Monitor

Dallas Semiconductor -> Maxim Integrated 

DS2761

MEMORY

The DS2761 has a 256-byte linear address space with registers for instrumentation, status, and control in

the lower 32 bytes, with lockable EEPROM and SRAM memory occupying portions of the remaining

address space. All EEPROM and SRAM memory is general purpose except addresses 30h, 31h, and 33h,

which should be written with the default values for the protection register, status register, and current

offset register, respectively. When the MSB of any two-byte register is read, both the MSB and LSB are

latched and held for the duration of the read data command to prevent updates during the read and ensure

synchronization between the two register bytes. For consistent results, always read the MSB and the LSB

of a two-byte register during the same read data command sequence.

EEPROM memory is shadowed by RAM to eliminate programming delays between writes and to allow

the data to be verified by the host system before being copied to EEPROM. All reads and writes to/from

EEPROM memory actually access the shadow RAM. In unlocked EEPROM blocks, the write data

command updates shadow RAM. In locked EEPROM blocks, the write data command is ignored. The

copy data command copies the contents of shadow RAM to EEPROM in an unlocked block of EEPROM

but has no effect on locked blocks. The recall data command copies the contents of a block of EEPROM

to shadow RAM regardless of whether the block is locked or not.

Table 3. MEMORY MAP

ADDRESS (HEX)

00

01

02–06

07

08

09–0B

0C

0D

0E

0F

DESCRIPTION

Protection Register

Status Register

Reserved

EEPROM Register

Special Feature Register

Reserved

Voltage Register MSB

Voltage Register LSB

Current Register MSB

Current Register LSB

10

11

12–17

18

19

1A–1F

20–2F

30–3F

40–7F

80–8F

90–FF

Accumulated Current Register MSB

Accumulated Current Register LSB

Reserved

Temperature Register MSB

Temperature Register LSB

Reserved

EEPROM, block 0

EEPROM, block 1

Reserved

SRAM

Reserved

* Each EEPROM block is read/write until locked by the LOCK command, after which it is read-only.

READ/WRITE

R/W

R

R/W

R/W

R

R

R

R

R/W

R/W

R

R

R/W*

R/W*

R/W

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