DS2711(2008) 查看數據表（PDF） - Maxim Integrated
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DS2711 Datasheet PDF : 15 Pages
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PARAMETER
Input Logic-High,
DMSEL, LED2
Input Logic-Low, DMSEL,
LED2
Input Leakage Current,
DMSEL
Threshold Voltage, Cell
Test
Threshold Voltage, Cell
Voltage Low
Threshold Voltage, Cell
Voltage Max1
Threshold Voltage, Cell
Voltage Max2
Threshold Voltage Delta
Threshold Voltage,
Thermistor - Min
Threshold Voltage,
Thermistor - Max
Threshold Voltage,
Thermistor - Stop
Threshold Current, TMR
Pin Suspend
Presence Test Current,
VP1, VP2
Reverse Leakage
Current, VP1, VP2
SYMBOL
CONDITIONS
VIH
(Note 1)
VIL
IIL1
VCTST
VBAT-LOW
VBAT-MAX1
VBAT-MAX2
VBAT-MAXΔ
VTHM-MIN
(Note 1)
After power-up mode
select,
DMSEL = VDD or VSS
RCTST = 80kΩ
CC1 = CC2 = high-Z
(Note 4)
CC1 = CC2 = high-Z
(Note 4)
CC1, CC2 active
(Note 4)
VBAT-MAX2 - VBAT-MAX1
(Note 5)
(Notes 1, 4, 6)
VTHM-MAX (Notes 1, 4, 6)
VTHM-STOP (Notes 1, 4, 6)
ITMR-SUS
IPTST
ILKGR
Parallel: VDD ≥ 4.0V,
Series: VDD ≥ 4.5V
VDD = 0V, VP1 = 1.5V,
VP2 = 3.0V
Current-Sense Reference
Voltage
VIREF
(Note 1, 4, 7)
Gain, Current-Sense
Error Amp
Gain, Current-Sense
Comparator
Propagation Time,
Current-Sense
Comparator
Hysteresis, Current-
Sense Comparator
GM
DS2711 (Note 8)
GM
DS2712 (Note 8)
tPDLY
DS2712, 2mV
over/underdrive
VHYS-COMP DS2712
DS2711/DS2712: Loose Cell NiMH Charger
MIN
VDD -
0.2V
TYP
MAX
UNITS
V
0.2
V
-1
+1
μA
85
100
115
mV
0.9
1.0
1.1
V
1.55
1.65
1.75
V
1.64
1.75
1.86
V
90
100
110
mV
VDD x
0.73
V
0.30
VDD x
0.33
0.36
V
VDD x
0.29
V
0.1
0.5
μA
10
15
μA
2
μA
125
mV
-6%
+6%
%
0.9
1.5
Ω-1
10
Ω-1
0.25
μs
22
24
26
mV
ELECTRICAL CHARACTERISTICS: TIMING
(4.0V ≤ VDD ≤ 5.5V, TA = -20°C to +70°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
Internal Timebase Period
tBASE
Internal Timebase
Accuracy
-10
Duty Factor, Series Fast
Charge
CC1
Duty Factor, Series
Precharge/Top-Off
CC1
Duty Factor, Parallel Fast
Charge
CC1, CC2
3 of 15
TYP
0.96
0.969
0.250
0.484
MAX
+10
UNITS
s
%
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