DS3231 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS3231 Datasheet PDF : 19 Pages
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Extremely Accurate I2C-Integrated
RTC/TCXO/Crystal
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 2.3V to 5.5V, VCC > VBAT, TA = TMIN to TMAX, unless otherwise noted.) (Typical values are at VCC = 3.3V, VBAT = 3.0V, and
TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Output Frequency
Frequency Stability vs.
Temperature (Commercial)
SYMBOL
CONDITIONS
fOUT VCC = 3.3V or VBAT = 3.3V
∆f/fOUT
VCC = 3.3V or
VBAT = 3.3V,
aging offset = 00h
0°C to +40°C
>40°C to +70°C
MIN TYP MAX UNITS
32.768
kHz
±2
±3.5
ppm
Frequency Stability vs.
Temperature (Industrial)
Frequency Stability vs. Voltage
Trim Register Frequency
Sensitivity per LSB
Temperature Accuracy
Crystal Aging
∆f/fOUT
VCC = 3.3V or
VBAT = 3.3V,
aging offset = 00h
-40°C to <0°C
0°C to +40°C
>40°C to +85°C
±3.5
±2
±3.5
ppm
∆f/V
1
ppm/V
-40°C
0.7
∆f/LSB Specified at:
+25°C
+70°C
0.1
ppm
0.4
+85°C
0.8
Temp
∆f/f0
VCC = 3.3V or VBAT = 3.3V
After reflow,
First year
not production tested
0–10 years
-3
+3
°C
±1.0
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.3V to 5.5V, TA = TMIN to TMAX, unless otherw.ise noted.) (Note 1)
PARAMETER
Active Battery Current
Timekeeping Battery Current
SYMBOL
IBATA
IBATT
CONDITIONS
EOSC = 0, BBSQW = 0,
SCL = 400kHz (Note 4)
VBAT = 3.63V
VBAT = 5.5V
EOSC = 0, BBSQW = 0,
EN32kHz = 1,
SCL = SDA = 0V or
SCL = SDA = VBAT (Note 4)
VBAT = 3.63V
VBAT = 5.5V
Temperature Conversion Current
Data-Retention Current
IBATTC
IBATTDR
EOSC = 0, BBSQW = 0,
SCL = SDA = 0V or
SCL = SDA = VBAT
VBAT = 3.63V
VBAT = 5.5V
EOSC = 1, SCL = SDA = 0V, +25°C
MIN TYP MAX UNITS
70
µA
150
0.84
3.0
µA
1.0
3.5
575
µA
650
100
nA
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