DS_K1S161611A 查看數據表（PDF） - Samsung

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产品描述 (功能)

生产厂家

DS_K1S161611A

1Mx16 bit Uni-Transistor Random Access Memory

Samsung 

K1S161611A

POWER UP SEQUENCE

1. Apply power.

2. Maintain stable power(Vcc min.=2.7V) for a minimum 200µs with CS1=high or CS2=low.

TIMING WAVEFORM OF POWER UP(1) (CS1 controlled)

VCC(Min)

VCC

Min. 200µs

CS1

CS2

Power Up Mode

Normal Operation

POWER UP(1)

1. After VCC reaches VCC(Min.), wait 200µs with CS1 high. Then the device gest into the normal operation.

Preliminary

UtRAM

TIMING WAVEFORM OF POWER UP(2) (CS2 controlled)

VCC(Min)

VCC

CS1

CS2

Min. 200µs

Power Up Mode

Normal Operation

POWER UP(2)

1. After VCC reaches VCC(Min.), wait 200µs with CS2 low. Then the device gets into the normal operation.

-3-

Revision 0.1

November 2003

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