DS_K6F4016U6G 查看數據表（PDF） - Samsung
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DS_K6F4016U6G Datasheet PDF : 9 Pages
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K6F4016U6G Family
Preliminary
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.33)
Typ
Max
Unit
3.0
3.3
V
0
0
V
-
Vcc+0.32)
V
-
0.6
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
Test Conditions
Min
ILI VIN=Vss to Vcc
-1
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH, -1
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
-
or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns -
55ns -
VOL IOL = 2.1mA
-
VOH IOH = -1.0mA
2.4
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
-
2) 0V≤CS2≤0.2V(CS2 controlled)
Typ1)
-
-
-
-
-
-
-
3
Max
1
1
4
22
27
0.4
-
10
Unit
µA
µA
mA
mA
V
V
µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
-4-
Revision 0.0
June 2003
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