K6X8008C2B-TF55 查看數據表（PDF） - Samsung
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K6X8008C2B-TF55 Datasheet PDF : 9 Pages
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K6X8008C2B Family
CMOS SRAM
1Mx8 bit Low Power full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 1M x8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2.0V(Min)
• Three state output and TTL Compatible
• Package Type: 44-TSOP2-400F
GENERAL DESCRIPTION
The K6X8008C2B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families sup-
port various operating temperature range for user flexibility of
system design. The families also support low data retention
voltage for battery back-up operation with low data retention
current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6X8008C2B-B
Commercial(0~70°C)
K6X8008C2B-F
Industrial(-40~85°C)
K6X8008C2B-Q Automotive(-40~125°C)
1. The parameter is measured with 50pF test load.
4.5~5.5V
Speed
551)/70ns
Power Dissipation
Standby
(ISB1, Max)
25µA
25µA
Operating
(ICC2, Max)
35mA
40µA
PKG Type
44-TSOP2-400F
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A4 1
44 A5
A3 2
43 A6
A2 3
42 A7
A1 4
41 OE
A0 5
40 CS2
CS1 6
39 A8
NC 7
38 NC
NC 8
37 NC
I/O1 9
36 I/O8
I/O2 10
35 I/O7
Vcc 11 44-TSOP2 34 Vss
Vss 12
I/O3 13
Forward 33 Vcc
32 I/O6
I/O4 14
31 I/O5
NC 15
30 NC
NC 16
29 NC
WE 17
28 A9
A19 18
27 A10
A18 19
26 A11
A17 20
25 A12
A16 21
24 A13
A15 22
23 A14
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs
Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input A0~A19 Address Inputs
I/O1~I/O8 Data Inputs/Outputs NC No Connect
Row
Addresses
Clk gen.
Precharge circuit.
Vcc
Vss
Row
select
Memory array
I/O1~I/O8
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
CS1
CS2
Control Logic
OE
WE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2003
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