K6X8008C2B-TF55 查看數據表（PDF） - Samsung
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K6X8008C2B-TF55 Datasheet PDF : 9 Pages
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K6X8008C2B Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Supply voltage
Vcc
K6X8008C2B Family
Ground
Vss
All Family
Input high voltage
VIH
K6X8008C2B Family
Input low voltage
VIL
K6X8008C2B Family
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width ≤30ns.
3. Undershoot: -3.0V in case of pulse width ≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CMOS SRAM
Min
4.5
0
2.2
-0.53)
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.52) V
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS1=VIH, CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, WE=VIH, VIN=VIH or VIL
- - 6 mA
Average operating current
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V,
CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,
VIN=VIL or VIH
- - 7 mA
- - 35 mA
Output low voltage
VOL IOL = 2.1mA
- - 0.4 V
Output high voltage
VOH IOH = -1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
- - 0.4 mA
Standby Current(CMOS)
Other input =0~Vcc,
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V (CS1 con-
trolled) or 2) 0V≤CS2≤0.2V(CS2 controlled)
K6X8008C2B-B -
K6X8008C2B-F -
K6X8008C2B-Q -
- 25
- 25 µA
- 40
4
Revision 1.0
September 2003
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