S1T8528 查看數據表（PDF） - Samsung
零件编号
产品描述 (功能)
生产厂家
S1T8528 Datasheet PDF : 35 Pages
| |||
ENHANCED-1 CHIP CT0 RF IC
S1T8528
ELECTRICAL CHARACTERISTICS (Continued)
Characteristic
Second Mixer input
Impedance
Second Mixer output
Impedance
Carrier Detector Threshold
Low Battery Detector
Symbol
RI(2M)
Test Conditions
Fc = 10.7MHz
Min.
−
Ro(2M)
Fc = 455kHz
−
CDTH
LBD
MIX1 Single-Ended
Matching,
Default Threshold=1010
LBD0 ~ LBD3 = 0 ( Default )
Only LBD2 = 0
Only LBD1 = 0
Only LBD3 = 0
LBD0 ~ LBD3 = 1
−
− 0.15
−0.1
RSSI Slope
VRSSI
MIX1 Single-Ended
Matching
RSSI Output Voltage
Dynamic Range
RSSI
MIX1 Single-Ended
Matching
Carrier Detect
VOH
Output High Voltage
RFin = 1µVrms
Default Threshold = 1010
Carrier Detect
VOL
RFin = 10µVrms
Output Low Voltage
Default Threshold = 1010
COMPRESSOR
( Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified )
Standard Output Voltage
Vo(com)
Vinc = 63.2mVrms → 0dB
ALC disabled (pin 13)
Compressor Gain
Difference
∆GV1(COM)
∆GV2(COM)
Vinc = −20dB
Vinc = −40dB
Compressor Output
Distortion
THDCOM
Vinc = 63.2mVrms → 0dB
Mute Attenuation Ratio
ATTMUTE
Vinc = 0dB
Compressor Limiting Voltage VLIM(COM) Vinc = Variable
ALC
VALC
RALC = 150kΩ, Vinc = 10dB
Splatter filter
Vo(SF)
VINC = 63.2mVrms → 0 dB
Maximum Output Voltage VOMIC(MAX) RL = 10KΩ
EXPANDER
(Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified)
Standard Output Voltage
V O(EXP)
VinE = 63.2mVrms → 0dB
−
−
Vcc-0.4
−
269
−10
−1.5
−
60
1.05
310
269
−
309
Typ.
4
1.5
−95
3.45
3.3
3.0
2.2
2.1
30
60
−
−
316
0
0
0.5
80
1.35
390
316
2.8
356
Max. Unit
−
kΩ
−
kΩ
−
dBm
0.1
V
0.075
− mV/dB
−
dB
−
V
0.4
V
363 mVrms
1.0
dB
1.5
dB
1.0
%
−
dB
1.65 Vp-p
450 mVrms
363 mVrms
−
Vp-p
403 mVrms
9
Share Link: 