DTA124TSATP 查看數據表（PDF） - ROHM Semiconductor
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DTA124TSATP Datasheet PDF : 3 Pages
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Transistors
DTA124TM / DTA124TE / DTA124TUA /
DTA124TKA / DTA124TSA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
M
Limits(DTA124T )
Unit
E
UA KA SA
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
150
200
300 mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −50
Collector-emitter breakdown voltage BVCEO −50
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
100
Input resistance
R1
15.4
Transition frequency
∗ Transition frequency of the device
fT
−
Typ.
−
−
−
−
−
−
250
22
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
28.6
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−10mA/−1mA
VCE=−5V, IC=−1mA
−
VCE=−10V, IE=5mA, f=100MHz ∗
zPackaging specifications
Package
VMT3
Package type
Taping
Code
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTA124TM
DTA124TE
−
DTA124TUA
−
DTA124TKA
−
DTA124TSA
−
EMT3
Taping
TL
3000
−
−
−
−
UMT3
Taping
T106
3000
−
−
−
−
SMT3
Taping
T146
3000
−
−
−
−
SPT
Taping
TP
5000
−
−
−
−
zElectrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100˚C
50
25˚C
−40˚C
20
10
5
2
1
-100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
-1
-500m
IC/IB=10
-200m
-100m
-50m
-20m
-10m
-5m
Ta=100˚C
25˚C
−40˚C
-2m
-1m
-10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/2
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