DTA143TSA 查看數據表（PDF） - ROHM Semiconductor

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DTA143TSA

Digital transistors (built-in resistor)

ROHM Semiconductor 

Transistors

DTA143TM / DTA143TE / DTA143TUA

DTA143TKA / DTA143TSA

!Absolute maximum ratings (Ta=25°C)

Parameter

Limits(DTA143T )

Symbol

Unit

M E UA KA SA

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−100

mA

Collector power dissipation

PC

150

200

300 mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55~+150

°C

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO −50

−

−

V IC=−50µA

Collector-emitter breakdown voltage BVCEO −50

−

−

V IC=−1mA

Emitter-base breakdown voltage

BVEBO

−5

−

−

V IE=−50µA

Collector cutoff current

ICBO

−

− −0.5 µA VCB=−50V

Emitter cutoff current

IEBO

−

− −0.5 µA VEB=−4V

Collector-emitter saturation voltage VCE(sat) −

− −0.3 V IC/IB=−5mA/−0.25mA

DC current transfer ratio

hFE

100 250 600

− IC=−1mA, VCE=−5V

Input resistance

R1

3.29 4.7 6.11 kΩ

−

Transition frequency

∗ Transition frequency of the device

fT

−

250

−

MHz VCE=−10V, IE=5mA, f=100MHz

∗

!Packaging specifications

Package

Packaging type

Code

VMT3

Taping

T2L

Type

Basic ordering

unit (pieces)

DTA143TM

DTA143TE

DTA143TUA

DTA143TKA

DTA143TSA

8000

−

−

−

−

EMT3

Taping

TL

3000

−

−

−

−

UMT3

Taping

T106

3000

−

−

−

−

SMT3

Taping

T146

3000

−

−

−

−

SPT

Taping

TP

5000

−

−

−

−

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