DTA124T 查看數據表（PDF） - Unisonic Technologies

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DTA124T

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA124T

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA =25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

-50

V

VEBO

-5

V

Collector Current

Collector Power Dissipation

IC

-100

mA

Pc

200

mW

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA =25C, unless otherwise specified)

PARAMETER

SYMBOL

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

BVCBO

BVCEO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

BVEBO

ICBO

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

IEBO

VCE(SAT)

DC Current Transfer Ratio

hFE

Transition Frequency (Note)

fT

Input Resistance

R1

Note: Transition frequency of the device.

TEST CONDITIONS

IC=-50μA

IC=-1mA

IE=-50μA

VCB=-50V

VEB=-4V

IC =-5mA, IB= -0.5mA

VCE =-5V, IC= -1mA

VCE=-10V, IE=5mA, f=100MHz

MIN TYP MAX UNIT

-50

V

-50

V

-5

V

-0.5 μA

-0.5 μA

-0.3 V

100 250 600

250

MHz

15.4 22 28.6 kΩ

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-064.C

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