AS29LV400T-70TC 查看數據表（PDF） - Alliance Semiconductor

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AS29LV400T-70TC

3V 512K x 8/256K × 16 CMOS Flash EEPROM

Alliance Semiconductor 

March 2001

AS29LV400

®

Item

Erase Suspend

Sector Protect

Ready/Busy

Description

Erase Suspend allows interruption of sector erase operations to read data from or program data to a

sector not being erased. Erase suspend applies only during sector erase operations, including the

time-out period. Writing an Erase Suspend command during sector erase time-out results in

immediate termination of the time-out period and suspension of erase operation.

AS29LV400 ignores any commands during erase suspend other than Read/Reset, Program or Erase

Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are

Don’t Care when writing Erase Suspend or Erase Resume commands.

AS29LV400 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.

To determine completion of erase suspend, either check DQ6 after selecting an address of a sector

not being erased, or poll RY/B Y. Check DQ2 in conjunction with DQ6 to determine if a sector is

being erased. AS29LV400 ignores redundant writes of Erase Suspend.

While in erase-suspend mode, AS29LV400 allows reading data (erase-suspend-read mode) from or

programming data (erase-suspend-program mode) to any sector not undergoing sector erase;

these operations are treated as standard read or standard programming mode. AS29LV400 defaults

to erase-suspend-read mode while an erase operation has been suspended.

Write the Resume command 30h to continue operation of sector erase. AS29LV400 ignores

redundant writes of the Resume command. AS29LV400 permits multiple suspend/resume

operations during sector erase.

When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated

for about <1 µs. When attempting to erase a protected sector, DATA polling and

Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode

without altering the specified sectors.

RY/B Y indicates whether an automated on-chip algorithm is in progress (RY/B Y = low) or

completed (RY/B Y = high). The device does not accept Program/Erase commands when

RY/B Y = low. RY/B Y= high when device is in erase suspend mode. RY/BY = high when device

exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open drain

output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.

Status operations

DATA polling (DQ7)

Toggle bit 1 (DQ6)

Exceeding time limit

(DQ5)

Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects

complement of data last written when read during the automated on-chip program algorithm (0

during erase algorithm); reflects true data when read after completion of an automated on-chip

program algorithm (1 after completion of erase agorithm).

Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when C E or

O E toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the

fourth pulse of WE during programming; after the rising edge of the sixth W E pulse during chip

erase; after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,

DQ6 toggles for <1 µs during program mode writes, and <5 µs during erase (if all selected sectors

are protected).

Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains

active. If DQ5 = 1 during chip erase, all or some sectors are defective; during byte programming or

sector erase, the sector is defective (in this case, reset the device and execute a program or erase

command sequence to continue working with functional sectors). Attempting to program 0 to 1

will set DQ5 = 1.

3/20/01; V.0.9.3

Alliance Semiconductor

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