EC10QS03L 查看數據表（PDF） - Nihon Inter Electronics

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EC10QS03L

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type : EC10QS03L

FEATURES

* Miniature Size,Surface Mount Device

* Extremely Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* 30 Volts through 100Volts Types Available

* Packaged in 12mm Tape and Reel

* Not Rolling During Assembly

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.06g

Rating

Symbol

EC10QS03L

Unit

Repetitive Peak Reverse Voltage

VRRM

30

V

Average Rectified Output Current

IO

1.0 Ta=28 °C *1

1.0 Ta=58 °C *2

50Hz Half Sine

Wave Resistive Load

A

RMS Forward Current

IF(RMS)

1.57

A

Surge Forward Current

IFSM

20

50Hz Half Sine Wave,1cycle

Non-repetitive

A

Operating JunctionTemperature Range Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

IRM Tj= 25°C, VRM= VRRM

VFM Tj= 25°C, IFM= 1.0A

Rth(j-a) Junction to Ambient

*1

*2

*1 Glass Epoxy Substrate Mounted

*2 Alumina Substrate Mounted

Soldering Lands=2x2mm,Both Sides

Min.

-

-

-

-

Typ.

-

-

-

-

Max.

1.0

0.45

157

108

Unit

mA

V

°C /W

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