EDE1108AASE 查看數據表（PDF） - Elpida Memory, Inc
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EDE1108AASE Datasheet PDF : 65 Pages
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EDE1104AASE, EDE1108AASE
Electrical Specifications
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Notes
Power supply voltage
VDD
−1.0 to +2.3
V
1
Power supply voltage for output
VDDQ
−0.5 to +2.3
V
1
Input voltage
VIN
−0.5 to +2.3
V
1
Output voltage
VOUT
−0.5 to +2.3
V
1
Storage temperature
Tstg
−55 to +100
°C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Notes
Operating case temperature
TC
0 to +95
°C
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Data Sheet E0404E20 (Ver. 2.0)
5
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