RMPA2053-103 查看數據表（PDF） - Raytheon Company

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RMPA2053-103

3V WCDMA Power Amplifier Module with Analog Bias Control

Raytheon Company 

Description

RMPA2053-103

3V WCDMA Power Amplifier Module with

Analog Bias Control

ADVANCED INFORMATION

The RMPA2053-103 is a power amplifier module (PAM) for 3GPP Wideband CDMA (WCDMA) applications. The

PAM has been specifically designed for low current draw at low power levels while maintaining high power

efficiency.The PAM is internally matched to 50 ohms to minimize the use of external components. High power-

added efficiency and excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor

(HBT) process.

Features

‹ Low backed-off power current consumption: 80 mA Itotal at 12 dBm

power output

‹ Single polarity supply operation and power-down mode

‹ 30% power-added efficiency at +27.5 dBm typical WCDMA output power

‹ Compact LCC package: 6.0 x 8.0 x 1.5 mm3

‹ 50 ohm matched and DC blocked input/output

‹ DC Power Management

Absolute

Maximum

Ratings1

Parameter

Supply Voltages

Bias Voltage 1 and 2

Chip Enable

RF Input Power

Case Operating Temperature

Storage Temperature

Symbol

Vcc1, Vcc2, and Vbias

Vba1, Vba2

Venbl

Pin

Tc

Tstg

Value

5

2.5

3.0

+5

-30 to +85

-40 to +110

Units

V

V

V

dBm

°C

°C

Electrical

Characteristics2

Parameter

Operating Frequency

Gain

(Pout=27.5 dBm)

Linear Output Power

PAE

(Pout=27.5 dBm)

ACPR1 3

ACPR24

Noise Power

(Pout ≤ 27.5 dBm)

Min Typ Max Unit

1920

1980 MHz

30

dB

27.5

dBm

30

%

-38

dBc

-52

dBc

-140 -135 dBm/Hz

Parameter

Min

Input VSWR (50Ω)

Itotal at 27.5 dBm Pout

Itotal at 12 dBm Pout

Stability (All spurious)5

Harmonics Pout ≤ 27.5 dBm

2fo, 3fo, 4fo

Shutdown Current6

Vcc

3.1

Typ

2.0:1

550

80

Max Unit

2.5:1

mA

mA

-65 dBc

-30 dBc

<1

uA

3.4 4.6 V

www.raytheonrf.com

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. All parameters met at Tc =+25°C, Vcc =+3.4V, f=1950 MHz, Vbias1,2=2.0V, Venbl=2.7V and load VSWR ≤ 1.2:1.

3. Continuous HPSK modulated carrier in a 3.84 MHz bandwidth, UL reference measurement channel (12.2 kbps), 3GPP TS 25.101 Annex A.2.1

(1 DPCCH @ 15 ksps, 1 DPDCH @ 60 ksps, DPCCH/DPDCH = -6 dB, OVSF code 16), +/-5 MHz.

4. Continuous HPSK modulated carrier in a 3.84 MHz bandwidth, UL reference measurement channel (12.2 kbps), 3GPP TS 25.101 Annex A.2.1

(1 DPCCH @ 15 ksps, 1 DPDCH @ 60 ksps, DPCCH/DPDCH = -6 dB, OVSF code 16), +/-10 MHz.

5. Output VSWR ≤ 6:1inband, all phase angles.

6. No applied RF signal. Vcc=+3.4V nominal, Venbl=0V.

Characteristic performance data and specifications are subject to change without notice.

Revised November 14, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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