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RF2175PCBA 查看數據表(PDF) - RF Micro Devices

零件编号
产品描述 (功能)
生产厂家
RF2175PCBA
RFMD
RF Micro Devices RFMD
RF2175PCBA Datasheet PDF : 6 Pages
1 2 3 4 5 6
0
Typical Applications
• 3V TETRA Cellular Handsets
• 3V CDMA Cellular Handsets
RF2175
3V 400MHz LINEAR AMPLIFIER
• Portable Battery-Powered Equipment
Product Description
The RF2175 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in TETRA hand-
held digital cellular equipment, spread-spectrum systems,
and other applications in the 380MHz to 512MHz band.
The RF2175 has an analog bias control voltage to maxi-
mize efficiency. The device is self-contained with 50Ω
input, and the output can be easily matched to obtain
optimum power, efficiency, and linearity characteristics.
The package is a small SSOP-16 plastic with backside
ground.
0.154
0.012
0.008
-A-
0.004
0.002 Note 3
Exposed Heat
EXPOSESD iHnEkATSINK
0.196
0.189
0.025
0.123
0.107
8° MAX
0° MIN
0.237
0.035
0.016
0.010
0.007
0.063
0.057
0.087
0.071
NOTES:
1. Shaded lead in Pin 1.
2. Lead coplanarity - 0.003 with respect to datum "A".
3. Lead standoff is specified from the lowest point on the
package underside.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VCC 1
LTUNE 2
NC 3
Q1C 4
GND1 5
RF IN 6
7
VREG 8
16 VBIAS
Bias
15
14 RF OUT
13 RF OUT
12 RF OUT
11
10
9
Functional Block Diagram
Rev A8 030313
Package Style: SSOP-16 Slug
Features
• Single 3V Supply
• 31.8dBm Linear Output Power
• 37.5dB Linear Gain
• 30% Linear Efficiency
• On-Board Power Down Mode
• 380MHz to 512MHz Operation
Ordering Information
RF2175
3V 400MHz Linear Amplifier
RF2175 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-287

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