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EL4089 查看數據表(PDF) - Elantec -> Intersil

零件编号
产品描述 (功能)
生产厂家
EL4089
ELANTE-ElectronicC
Elantec -> Intersil ELANTE-ElectronicC
EL4089 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
EL4089C
DC Restored Video Amplifier
Open Loop DC Electrical Characteristics
Provisional Supplies at g15V Load e 1 kX TA e a25 C
Parameter
Description
Temp
Contd
Min Typ
Restore Section Contd
PSRR
Power Supply Rejection Ratio (Note 4)
a25 C
60
90
VTHRESHOLD
IIH Hold
IIL Hold
Supply Current
HOLD Logic Threshold
HOLD Input Current Logic High
HOLD Input Current Logic Low
a25 C
08
a25 C
1
a25 C
5
Isy Hold
Supply Current (HOLD e 5V)
a25 C
48
60
Isy Sampling
Supply Current (HOLD e 0V)
a25 C
50
65
Max
20
5
15
90
11 0
Test
Level
II
II
II
II
II
II
Units
dB
V
mA
mA
mA
mA
Closed Loop AC Electrical Characteristics
Provisional Supplies at g15V Load e 150X and 15 pF Rf and Rg e 300X AV e 2 TA e 25 C (See Note 7 about Test Fixture)
Parameter
Description
Min
Typ
Max
Test
Level
Units
Amplifier Section
SR
Slew Rate (Note 5)
500
V
V ms
SR
Slew Rate with g5V Supplies
(Note 5)
275
V
V ms
BW
Bandwidth
g5V Supplies
b3 dB
60
b3 dB
55
V
MHz
V
MHz
BW
Bandwidth
g5V Supplies
g0 1 dB
25
g0 1 dB
23
V
MHz
V
MHz
dG
Differential Gain
VS e g15V
0 02
at 3 58 MHz (Note 6)
VS e g5V
0 03
V
%
V
%
dPh
Differential Phase
VS e g15V
0 05
V
at 3 58 MHz (Note 6)
VS e g5V
0 06
V
Restore Section
SR
Restore Amplifier Slew Rate
(Test Circuit) 20%–80%
25
V
V ms
THE
Time to Enable Hold
25
V
ns
THD
Time to Disable Hold
40
V
ns
Note 1 For current feedback amplifiers AVOL e ROL RINb
Note 2 VCM e g10V for VS e g15V
Note 3 Measured from S H Input to amplifier output while restoring
Note 4 VOS is measured at VS e g4 5V and VS e g16V both supplies are changed simultaneously
Note 5 SR measured at 20% to 80% of a 4V pk-pk square wave
Note 6 DC offset from b0 714V through a0 714V ac amplitude is 286 mVp-p equivalent to 40 ire
Note 7 Test fixture was designed to minimize capacitance at the INb input A ‘‘good’’ fixture should have less than 2 pF of stray
capacitance to ground at this very sensitive pin See application notes for further details
3

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