EL7532(2007) 查看數據表（PDF） - Intersil

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EL7532
(Rev.:2007)

Monolithic 2A Step-Down Regulator

Intersil 

EL7532

Absolute Maximum Ratings (TA = +25°C)

VIN, VDD, POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V

LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)

RSI, EN, VO, FB to SGND . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)

PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V

Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4A

ESD Classification

Human Body Model (Per JESD22-A114-B) . . . . . . . . . . . . Class 2

Thermal Information

Thermal Resistance (Typical)

θJA (°C/W)

MSOP10 Package (Note 1) . . . . . . . . . . . . . . . . . . .

115

Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTE:

1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are

at the specified temperature and are pulsed tests, therefore: TJ = TC = TA

Electrical Specifications VDD = VIN = VEN = 3.3V, C1 = C2 = 10µF, L = 1.8µH, VO = 1.8V, unless otherwise specified.

PARAMETER

DESCRIPTION

CONDITIONS

MIN TYP MAX

UNIT

DC CHARACTERISTICS

VFB

Feedback Input Voltage

790

800

810

mV

IFB

Feedback Input Current

250

nA

VIN, VDD

Input Voltage

2.5

5.5

V

VIN,OFF

Minimum Voltage for Shut-down

VIN falling

2

2.2

V

VIN,ON

Maximum Voltage for Start-up

VIN rising

2.2

2.4

V

IDD

Supply Current

PWM, VIN = VDD = 5V

400

500

µA

EN = 0, VIN = VDD = 5V

0.1

1

µA

RDS(ON)-PMOS PMOS FET Resistance

VDD = 5V, wafer test only

52

80

mΩ

RDS(ON)-NMOS NMOS FET Resistance

VDD = 5V, wafer test only

35

65

mΩ

TOT,OFF

Over-temperature Threshold (Note 2) T rising

145

°C

TOT,ON

Over-temperature Hysteresis (Note 2) T falling

130

°C

IEN, IRSI

EN, RSI Current

VEN, VRSI = 0V and 3.3V

-1

1

µA

VEN1, VRSI1 EN, RSI Rising Threshold

VDD = 3.3V

2.4

V

VEN2, VRSI2 EN, RSI Falling Threshold

VDD = 3.3V

0.8

V

VPOR

Minimum VFB for POR, WRT Targeted

VFB Value

VFB rising

VFB falling

95

%

86

%

VOLPOR

POR Voltage Drop

ISINK = 5mA

35

70

mV

VLINEREG

Line Regulation (Note 2)

VIN = 2.5V to 6V, IOUT = 2A, VOUT = 1.8V

0.1

%/V

VLOADREG

Load Regulation (Note 2)

VIN = 3.3V, VOUT = 1.8V, IOUT = 0 to 2A

0.5

%

AC CHARACTERISTICS

FPWM

PWM Switching Frequency

tRSI

Minimum RSI Pulse Width (Note 2)

tSS

Soft-start Time (Note 2)

tPOR

Power On Reset Delay Time (Note 2)

NOTE:

2. Not production tested.

1.35

1.5

1.65 MHz

25

50

ns

650

µs

80

100

120

ms

2

FN7435.8

November 2, 2007

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