DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

EM638325 查看數據表(PDF) - Etron Technology

零件编号
产品描述 (功能)
生产厂家
EM638325
Etron
Etron Technology Etron
EM638325 Datasheet PDF : 72 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
EtronTech
CL K
ADDRESS
COMMAND
T0
T1
Bank,
Col A
READ A
NOP
T2
NOP
2Mega x 32 SDRAM
T3
T4
T5
T6
NOP
Bank(s)
Precharge
tRP
NOP
NOP
EM638325
T7
T8
Bank,
Row
Activate
NOP
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT A1 DOUT A2
DOUT A3
DOUT A0
DOUT A1 DOUT A2
DOUT A3
Read to Precharge (CAS# Latency = 2, 3)
5 Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BS = Bank, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after
the read operation. Once this command is given, any subsequent command cannot occur within a
time delay of {tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this
command and the auto precharge function is ignored.
6 Write command
(RAS# = "H", CAS# = "L", WE# = "L", BS = Bank, A10 = "L", A0-A7 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active
row in an active bank. The bank must be active for at least tRCD(min.) before the Write command is
issued. During write bursts, the first valid data-in element will be registered coincident with the Write
command. Subsequent data elements will be registered on each successive positive clock edge
(refer to the following figure). The DQs remain with high-impedance at the end of the burst unless
another command is initiated. The burst length and burst sequence are determined by the mode
register, which is already programmed. A full-page burst will continue until terminated (at the end of
the page it will wrap to column 0 and continue).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COM MAND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQ0 - DQ3
DIN A0
DIN A1
DIN A2
DIN A3
don't care
The first data element and the write
are registered on the same clock edge.
Extra data is masked.
Burst Write Operation (Burst Length = 4, CAS# Latency = 1, 2, 3)
A write burst without the AutoPrecharge function may be interrupted by a subsequent Write,
BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt
coming from Write command can occur on any clock cycle following the previous Write command
(refer to the following figure).
Preliminary
9
Rev 1.4
Oct. 2005

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]