EMD29-T2R 查看數據表（PDF） - ROHM Semiconductor
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EMD29-T2R Datasheet PDF : 11 Pages
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EMD29
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol DTr1(PNP) DTr2(NPN) Unit
Supply voltage
VCC
-12
50
V
Input voltage
VIN -10 to 5 -10 to 40 V
Output current
IO
-
50
mA
Collector current
IC(MAX)*1
-500
100
mA
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics (Ta = 25°C) <For DTr1(PNP)>
PD*2*3
Tj
Tstg
150
150
for -55 to +150
mW/Total
℃
℃
Parameter
Symbol
Conditions
d Input voltage
e Output voltage
d Input current
n s Output current
e n DC current gain
Input resistance
m ig Resistance ratio
m s Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO = -100mA, II = -5mA
VI = -5V
VCC = -12V, VI = 0V
VO = -2V, IO = -100mA
-
-
VCE = -10V, IE = 5mA,
f = 100MHz
o e lElectrical characteristics (Ta = 25°C) <For DTr2(NPN)>
c D Parameter
Symbol
Conditions
e Input voltage
R ew Output voltage
t Input current
o N Output current
N DC current gain
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 2mA
IO = 10mA, II = 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
Values
Min. Typ. Max.
-
- -0.3
-2.5 -
-
- -60 -300
-
- -6.4
-
- -500
140 -
-
0.7 1 1.3
8 10 12
- 260 -
Values
Min. Typ. Max.
-
- 0.5
3.0 -
-
- 100 300
-
- 880
-
- 500
30
-
-
Unit
V
mV
mA
nA
-
kΩ
-
MHz
Unit
V
mV
μA
nA
-
Input resistance
R1
-
7 10 13 kΩ
Resistance ratio
R2/R1
-
0.8 1.0 1.2 -
Transition frequency
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
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2/7
20151127 - Rev.002
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