EMD38 查看數據表（PDF） - ROHM Semiconductor
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EMD38 Datasheet PDF : 6 Pages
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Transistors
zAbsolute maximum ratings (Ta=25°C)
DTr1
Parameter
Symbol
DTr1
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
−6 to +40
V
Output current
Power dissipation
Junction temperature
IO
IC (Max.)∗1
Pd ∗2
70
100
120
Tj
150
mA
mW
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land, and only DTr1 is on duty.
DTr2
Parameter
Symbol
DTr2
Unit
Supply voltage
VCC
−50
V
Input voltage
Output current
Power dissipation
Junction temperature
VIN
−10 to +5
V
IO
IC
∗3
(Max.)
Pd ∗4
−100
−100
120
mA
mW
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗3 Characteristics of built-in transistor
∗4 Each terminal mounted on a recommended land, and only DTr2 is on duty.
DTr1/DTr2
Parameter
Symbol
Limits
Power dissipation
Pd 150(TOTAL)
Storage temperature
Tstg −55 to +125
∗ Each terminal mounted on a recommended land.
Unit
mW ∗
°C
EMD38
2/5
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