EMD9(2010) 查看數據表（PDF） - ROHM Semiconductor
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EMD9 Datasheet PDF : 4 Pages
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Digital Transistor (Dual Digital Transistors for Inverter Drive)
EMD9 / UMD9N / IMD9A
Features
1) DTA114Y and DTC114Y transistors are built-in a EMT
or UMT or SMT package.
Inner circuit
EMD9 / UMD9N
(3) (2) (1)
R1 R2
DTr2
DTr1
R2 R1
(4) (5) (6)
R1=10kΩ
R2=47kΩ
IMD9A
(4) (5) (6)
R1 R2
DTr2
DTr1
R2 R1
(3) (2) (1)
R1=10kΩ
R2=47kΩ
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMD9
EMT6
D9
T2R
8000
UMD9N
UMT6
D9
TR
3000
IMD9A
SMT6
D9
T108
3000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
VCC
50
V
VIN
−6 to +40
V
Output current
IO
70
mA
Collector current
Power dissipation EMD9, UMD9N
IMD9A
IC (Max.)
Pd
100
150(TOTAL)
300(TOTAL)
mA
mW ∗1
mW ∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 120mW per element must not be exceeded. PNP type negative symbols have been omitted.
∗2 200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Dimensions (Unit : mm)
EMD9
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
Each lead has same dimensions
Abbreviated symbol : D9
UMD9N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol : D9
IMD9A
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol : D9
Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
Input resistance
Resistance ratio
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
−
1.4
−
−
−
68
−
7
3.7
PNP type negative symbols have been omitted.
∗ Characteristics of built-in transistor.
Typ.
−
−
0.1
−
−
−
250
10
4.7
Max.
0.3
−
0.3
0.88
0.5
−
−
13
5.7
Unit
V
V
mA
mA
−
MHz
kW
−
Conditions
VCC=5V , IO=100μA
VO=0.3V , IO=1mA
IO=5mA , II=0.25mA
VI=5V
VCC=50V , VI=0V
IO=5mA , VO=5V
VCE=10V , IE= −5mA , f=100MHz
−
−
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
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