EN29LV800C(2008) 查看數據表（PDF） - Eon Silicon Solution Inc.

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EN29LV800C
(Rev.:2008)

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Eon Silicon Solution Inc. 

EN29LV800C

EN29LV800C

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

• High performance

- Access times as fast as 70 ns

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and fifteen 32-Kword sectors (word mode)

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• Sector protection:

- Hardware locking of sectors to prevent

program or erase operations within

individual sectors

- Additionally, temporary Sector Unprotect

allows code changes in previously locked

sectors.

• JEDEC Standard Embedded Erase and

Program Algorithms

• JEDEC standard DATA# polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Low Vcc write inhibit < 2.5V

• Minimum 100K endurance cycle

• Package Options

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm TFBGA

• Industrial temperature Range

GENERAL DESCRIPTION

The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The

EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to

eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29LV800C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions 1

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

Rev. D, Issue Date: 2008/09/19

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