ESDA6V1W5 查看數據表（PDF） - STMicroelectronics

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ESDA6V1W5

TRANSIL™ array for data protection

STMicroelectronics 

ESDAxxxWx

1 Characteristics

VBR

IRM @ VRM VF @ IF

Rd

αT

C

Part Numbers

@ IR

min. max.

max.

typ.(1) max.(2) typ.

0V bias

V

V mA

ESDA25W

25 30

1

ESDA25W5

25 30

1

ESDA6V1-5W6

6.1 7.2 1

ESDA6V1W5

6.1 7.2 1

1. Square pulse lpp = 15 A, tp = 2.5 µs

2. VBR = aT* (Tamb - 25 °C) * VBR (25 °C)

Figure 1. Peak power dissipation versus

initial junction temperature

µA V

V mA

Ω 10-4/°C pF

1

24 1.2 10 1.1

10

65

1

24 1.2 10 1.9

10

30

1

3 1.25 200 0.61

6

50

1

3 1.25 200 0.35

6

90

Figure 2. Peak pulse power versus

exponential pulse duration

(Tj initial = 25°C) (ESDA25W)

PPP[Tj initial] / PPP[Tj initial=25°C]

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0

Tj initial (°C)

25

50

75

100

PPP(W)

10000

1000

125

Fig 1

100

1

ESDA25W

Tj initial = 25°C

tp(µs)

10

100

3/11

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