ESDA6V1W5 查看數據表（PDF） - STMicroelectronics

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ESDA6V1W5

TRANSIL™ array for data protection

STMicroelectronics 

ESDAxxxWx

1 Characteristics

Figure 7. Capacitance versus reverse applied Figure 8. Relative variation of leakage current

voltage (typical values)

versus junction temperature

(ESDA6V1W5 / ESDA6V1-5W6)

(typical values)

C(pF)

80

70

60

ESDA6V1W5

F=1MHz

VOSC=30mVRMS

Tj=25°C

50

40

30

ESDA6V1-5W6

20

VR(V)

10

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

IR[Tj] / IR[Tj=25°C]

1000

100

10

1

25

ESDA25W

ESDA25W5

ESDA6V1-5W6

Tj(°C)

ESDA6V1W5

50

75

100

125

Figure 9. Peak forward voltage drop versus

peak forward current (typical

values) (ESDA25W / ESDA25W5)

IFM(A)

1E+0

Tj = 25°C

ESDA25W / ESDA25W5

Figure 10. Peak forward voltage drop versus

peak forward current

(typical values)

(ESDA6V1W5 / ESDA6V1-5W6)

IFM(A)

1E+0

Tj = 25°C

ESDA6V1W5

1E-1

1E-1

ESDA6V1-5W6

1E-2

1E-2

VFM(V)

VFM(V)

1E-3

1E-3

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5 4.0

0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

Figure 11. ESD response to IEC61000-4-2

(air discharge 15 kV, positive surge)

5/11

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