ESDA25DB3RL 查看數據表（PDF） - STMicroelectronics

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ESDA25DB3RL

TRANSIL™ ARRAY FOR ESD PROTECTION

STMicroelectronics 

ESDA25DB3

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Parameter

VPP

Electrostatic discharge

MIL STD 883C - Method 3015-6

PPP

Peak pulse power (8/20µs)

Tstg

Storage temperature range

Tj

Maximum junction temperature

TL

Maximum lead temperature for soldering during 10s

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current

IPP

Peak pulse current

αT

Voltage temperature coefficient

C

Capacitance

Rd

Dynamic resistance

Value

Unit

25

kV

500

W

- 55 to + 150 °C

125

°C

260

°C

Types

VBR @

IR

IRM @ VRM

Rd

αT

C

min. max.

max.

typ.

max.

typ.

note1

V

V

note1

mA

µA

V

note 2

Ω

note 3

10-4/°C

0V bias

pF

ESDA25DB3

25

30

1

2

24

0.5

9.7

50

note 1 : Betwenn any I/O pin Groung

note 2 : Square pulse, Ipp = 25A, tp=2.5µs.

note 3 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C)

2/5

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