DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ESDA14V2-4BF3(2010) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
ESDA14V2-4BF3
(Rev.:2010)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA14V2-4BF3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
1
Characteristics
ESDA14V2-4BF3
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VPP ESD discharge
MIL STD 883G-Method 3015-7
± 25
IEC 61000-4-2 air discharge
± 15
kV
IEC 61000-4-2 contact discharge
±8
PPP Peak pulse power (8/20µs)
Tj
Junction temperature
Tstg Storage temperature range
TL
Lead solder temperature (10 seconds duration)
Top
Operating temperature range
50
W
125
°C
-55 to +150
°C
260
°C
-40 to +125
°C
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
I
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL VBR VRM
V
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
C
Capacitance
Slope: 1 / Rd
IPP
VBR @ IR
IRM @ VRM
Rd
αT
C
Order code
min. max.
max.
typ.(1)
max.(2)
max.
0 V bias
V
V
mA
µA
V
W
10-4/C
pF
0.5
12
ESDA14V2-4BF3 14.2
18
1
3.2
10
15
0.1
3
1. Square pulse, Ipp = 3 A, tp = 2.5 µs.
2. Δ VBR = αT* (Tamb -25 °C) * VBR (25 °C)
2/8
Doc ID 11645 Rev 4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]