ESDA14V2-4BF3 查看數據表（PDF） - STMicroelectronics
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ESDA14V2-4BF3 Datasheet PDF : 8 Pages
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ESDA14V2-4BF3
Characteristics
Figure 3.
Clamping voltage versus peak
Figure 4.
pulse current (Tj initial = 25 °C)
(Rectangular waveform, tp = 2.5 µs)
Junction capacitance versus
reverse applied voltage (typical
values)
IPP(A)
10.0
tp =2.5 µs
Tj initial =25 °C
C(pF)
16
14
12
F=1 MHz
VOSC=30 mV RMS
Tj=25 °C
10
1.0
8
6
4
0.1
0
VCL(V)
2
VR(V)
0
10
20
30
40
50
60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 5.
Relative variation of leakage
current versus junction
temperature (typical values)
IR [Tj ] / IR [Tj =25 °C]
100
Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge)
10
Tj(°C)
1
25
50
75
100
125
Figure 7. ESD response to IEC 61000-4-2
(-15 kV air discharge)
Figure 8. Analog crosstalk measurements
0.00
-30.00
-60.00
-90.00
-120.00
100.0k
1.0M
Xtalk
10.0M
f/Hz
100.0M
1.0G
3/8
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