ESDALC6V1F2 查看數據表（PDF） - STMicroelectronics

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ESDALC6V1F2

Quad low capacitance Transil™ array for ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDALC6V1F2

Table 2. Absolute maximum ratings (Tamb )= 25° C

Symbol

Parameter

Value

Unit

IEC 61000-4-2 air discharge

VPP

ESD discharge

IEC 61000-4-2 contact discharge

± 15

kV

±8

PPP

Peak pulse power dissipation (8/20 µs). (1)

Tj initial = Tamb

25

W

Tj

Junction temperature

125

°C

Tstg

Storage temperature

- 55 to +150

°C

TL

Maximum lead temperature for soldering during 10 s at 5 mm for case

260

°C

TOP

Operating temperature range

- 40 to + 125

°C

1. For a surge greater than the maximum values, the diode will fail in short-circuit

Table 3. Thermal resistance

Synbol

Parameter

Rth(j-a) Junction to ambient on printed circuit on recommended pad layout

Value

150

Unit

°C/W

Table 4. Electrical characteristics

Symbol

Parameter

VRM

Stand-of voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current @ VRM

IPP

Peak pulse current

αT

Voltage temperature coefficient

VF

Forward voltage drop

Type

IRM @ VRM

µA max

V

VBR @ IR

Vmin

Vmax

mA

ESDALC6V1F2 0.5

3

6.1

7.2

1

RD

αT

C

Typ 10-4/°C max pFtyp @0 V

1

5

12

2/7

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