ESDALC6V1M6 查看數據表（PDF） - STMicroelectronics
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ESDALC6V1M6 Datasheet PDF : 11 Pages
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ESDALC6V1M6, ESDALC6V1-5M6
Characteristics
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 3.
PPP [ Tj i n it i al ] /PPP[ Tj i n it i al = 2 5 °C]
1.1
PPP(W)
1000
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
T j(°C)
0.0
0
25
50
75
100
125
150
10
1
Peak pulse power versus
exponential pulse duration
Tj initial = 25°C
tP(µs)
10
100
Figure 4.
Clamping voltage versus peak
pulse current (typical values,
8/20 µs waveform)
IPP(A)
100.0
8/20µs
Tj initial =25°C
Figure 5. Forward voltage drop versus peak
forward current (typical values)
1.E+00
IFM( A)
10.0
1.0
0.1
0
1.E-01
1.E-02
Tj =125°C
Tj =25°C
VCL(V)
1.E-03
V FM (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
20
30
40
50
60
70
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
14
13
F=1MHz
12
VOSC=30mVRMS
Tj=25°C
11
10
9
8
7
6
5
4
3
2
VR(V)
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IR [ Tj] / IR [ Tj= 2 5 °C]
100
VR =3V
10
1
25
50
T j(°C)
75
100
125
3/11
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