ESDALC6V1P6 查看數據表（PDF） - STMicroelectronics
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ESDALC6V1P6
STMicroelectronics
ESDALC6V1P6 Datasheet PDF : 9 Pages
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ESDALC6V1Px
Characteristics
Figure 1. Peak power dissipation versus
initial junction temperature
PPP[Tj initial] / PPP [Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Tj(°C)
25
50
75
100
125
150
175
Figure 2.
Peak pulse power versus
exponential pulse duration
(Tj initial = 25° C)
PPP(W)
1000
Tj initial = 25°C
100
10
1
tp(µs)
10
100
Figure 3.
Clamping voltage versus peak
pulse current (typical values,
rectangular waveform)
IPP(A)
100.0
tp = 2.5µs
Tj initial = 25°C
10.0
Figure 4. Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+00
1.E-01
Tj = 125°C
Tj = 25°C
1.0
1.E-02
0.1
0
VCL(V)
10
20
30
40
50
60
70
VFM(V)
1.E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
VR(V)
2
3
4
F=1MHz
VOSC=30mVRMS
Tj=25°C
IR [Tj] / IR [Tj=25°C]
1.E+04
VR =3 V
1.E+03
1.E+02
1.E+01
1.E+00
Tj(°C)
5
6
25
50
75
100
125
150
3/9
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