ESDA6V1W5-TH-WS 查看數據表（PDF） - Willas Electronic Corp.

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ESDA6V1W5-TH-WS

Transient Voltage Suppressors for ESD Protection

Willas Electronic Corp. 

WILLAS

FM120-M+

ESDA6V1W5THRU

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FM1200-M+

SOD-123+ PACKAGE

Pb Free Produc

Features

Electr•icBbeaattltcehPr praerovrceaermsseseldeetaeskiraggne,

excellent

current a

power dissipation offers

nd thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

Sym•bHoiglh current capability, loPwaforrawmaredtevorltage drop.

• High surge capability.

IP•PGuardriMngafxoirmouvemrvRoletavgeersperotPeectaioknP. ulse Current

V•CUltra higChl-asmpepeindgswVitoclhtaingge. @ IPP

• Silicon epitaxial planar chip, metal silicon junction.

VR•WLMead-freWeoprakritnsgmPeeetaeknvRireovnemresnetaVl ostltaangdeards of

I•R

MIL-STMD-a1x9i5m0u0 m/228Reverse Leakage Current

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@

IMT echaTnesitcCaulrrdeantta

VB•REpoxy :BUrLe9a4k-dVo0wranteVdofllatamgeere@tarIdTant

Package outline

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

I•F Case : MFoolrdwedarpdlaCstuicr,reSnOtD-123H

,

V•FTerminaFlso:rPwlaatreddVteorlmtaingaels@, soIlFderable per MIL-STD-750

Method 2026

0.031(0.8) Typ.

0.031(0.8) Typ.

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

Electr•icWaeligChth: Aaprparocxtimeraitesdti0c.0s11 gram

Part NumbersMAXIMUM RVABTRINGS AND ELECTRICAL CHARACTERISTICSVF

Ratings at 25℃ ambiMenitnt.empeTraytpure unMlesasxo. therwiseITspecified.VRWM

IR

Max.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derVate curreVnt by 20%V

mA

V

µA

V

C

IF

Typ. 0v bias

mA

pF

ESDA6V1W5

R6A.1TINGS6.7

7.2

SY1MBOL FM120-M5H FM130-MH F1M140-MH FM1501-M.2H5FM160-MH F2M01800-MH FM1100-3M5H FM1150-MH FM1200-MH

Marking Code

12

13

14

15

16

18

10

115 120

1M.SaxqimuuamreRpecuulrsreentIPPPe=ak1R5eAv,etrps=e2V.o5ltµagse 2.VBR=aTV*R(RTMamb-252°0C)*VB3R0(25°C)40

50

60

80

100

150

200

Maximum RMS Voltage

TMyaxpimicumaDl CCBhloackrinagcVtoeltargiestics

VRMS

14

21

28

35

42

VDC

20

30

40

50

60

56

70

105

140

80

100

150

200

Maximum Average Forward Rectified Current

IO

1.0

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

Typical Junction Capacitance (Note 1)

Operating Temperature Range

Storage Temperature Range

IFSM

RΘJA

CJ

TJ

TSTG

-55 to +125

30

40

120

- 65 to +175

-55 to +150

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

IR

0.5

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

Fig1.Peak pulse power versus exponential

Pulse duration (Tj initial=25°C)

Fig2. Clamping voltage versus peak

pulse current(Tj initial=25°C, rectangular

Waveform, tp=2.5μs)

2012-06

2012-09

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

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