ET830 查看數據表（PDF） - Estek Electronics Co. Ltd
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ET830 Datasheet PDF : 5 Pages
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5 Amps，500Volts
N-Channel MOSFET
■ Description
The ET830 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 1.5Ω@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
ET830
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
5.0
5.0＊
3.0
3.0＊
20
20＊
Avalanche Energy
Repetitive (Note 1)
EAR
7.6
Single Pulse (Note 2)
EAS
305
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
PD
Derate above 25℃
76
40
0.6
0.32
Junction Temperature
Storage Temperature
＊
Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
1
BEIJING ESTEK ELECTRONICS CO.,LTD
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