M48Z512A(2006) 查看數據表（PDF） - STMicroelectronics

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M48Z512A
(Rev.:2006)

4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM

STMicroelectronics 

Maximum rating

3

Maximum rating

M48Z512A M48Z512AY M48Z512AV

Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Caution:

Table 6. Absolute maximum ratings

Symbol

Parameter

Value Unit

TA

Ambient operating temperature

Grade 1

Grade 6

0 to 70

°C

-40 to 85

TSTG Storage temperature (VCC off)

TBIAS Temperature under bias

TSLD(1)(2) Lead solder temperature for 10 seconds

VIO

Input or Output voltages

VCC

Supply voltage

–40 to 85 °C

Grade 1

Grade 6

0 to 70

°C

–40 to 70

260

°C

–0.3 to 7 V

M48Z512A/512AY –0.3 to 7.0 V

M48Z512AV

–0.3 to 4.6 V

IO

Output current

20

mA

PD

Power dissipation

1

W

1. For DIP package: soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to

exceed 150°C for longer than 30 seconds). No preheating above 150°C, or direct exposure to IR reflow (or

IR preheat) allowed, to avoid damaging the Lithium battery.

2. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal

budget not to exceed 245°C for greater than 30 seconds).

Negative undershoots below –0.3V are not allowed on any pin while in the battery back-up

mode. Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.

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