M48Z512A(2006) 查看數據表（PDF） - STMicroelectronics

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M48Z512A
(Rev.:2006)

4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM

STMicroelectronics 

M48Z512A M48Z512AY M48Z512AV

DC and ac parameters

Table 10. Power Down/Up ac characteristics

Symbol

Parameter(1)

Min

Max

Unit

tF(2)

VPFD (max) to VPFD (min) VCC fall time

300

µs

M48Z512A/Y

10

tFB(3) VPFD (min) to VSS VCC fall time

µs

M48Z512AV 150

tR

VPFD (min) to VPFD (max) VCC rise time

10

µs

tRB

VSS to VPFD (min) VCC rise time

1

µs

tWPT WRITE Protect time

M48Z512A/Y

40

150

µs

M48Z512AV

40

250

tER E Recovery time

40

120

ms

1. Valid for ambient operating temperature: TA = 0 to 70°C or -40 to 85°C; VCC = 4.75 to 5.5V, 4.5 to 5.5V, or

3.0 to 3.6V (except where noted).

2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/WRITE protection not occurring

until 200µs after VCC passes VPFD (min).

3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

Table 11. Power Down/Up trip points dc characteristics

Symbol

Parameter(1)(2)

Min Typ Max Unit

VPFD Power-fail deselect voltage

M48Z512A 4.5

4.6 4.75

V

M48Z512AY 4.2

4.3

4.5

V

M48Z512AV 2.8

2.9

3.0

V

M48Z512A/Y

3.0

V

VSO Battery back-up switchover voltage

M48Z512AV

2.5

V

tDR(3) Expected data retention time

10

Years

1. All voltages referenced to VSS.

2. Valid for ambient operating temperature: TA = 0 to 70°C or -40 to 85°C; VCC = 4.75 to 5.5V, 4.5 to 5.5V, or

3.0 to 3.6V (except where noted).

3. At 25°C; VCC = 0V.

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