FDC6327 查看數據表（PDF） - Fairchild Semiconductor
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FDC6327 Datasheet PDF : 9 Pages
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Typical Characteristics: P-Channel
10
VGS = -4.5V
-3.5V
8
-3.0V
6
-2.5V
4
-2.0V
2
-1.5V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.5
ID = -1.9A
1.4 VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
6
TA = -55oC
25oC
125oC
4
2
0
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
2.4
2.2
VGS = -2.0V
2
1.8
1.6
-2.5V
1.4
-3.0V
-3.5V
1.2
-4.0V -4.5V
1
0.8
0
2
4
6
8
10
-ID, DIRAIN CURRENT (A)
Figure 12. On-Resistance Variation
with Drain Current and Gate Voltage.
0.5
0.4
0.3
0.2
0.1
0
1
ID = -1A
TA = 125oC
TA = 25oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.4
0.8
1.2
1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6327C, Rev. E
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