FDC655BN 查看數據表（PDF） - Fairchild Semiconductor

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FDC655BN

Single N-Channel, Logic Level, PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

∆BVDSS

∆TJ

IDSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

IGSS

Gate–Body Leakage

On Characteristics (Note 2)

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = -55°C

VGS = ±20 V, VDS = 0 V

VGS(th)

∆VGS(th)

∆TJ

RDS(on)

Gate Threshold Voltage

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

gFS

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 6.3 A

VGS = 4.5 V, ID = 5.5 A

VGS = 10 V, ID = 6.3 A, TJ =125°C

VDS = 10 V, ID = 6.3 A

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics (Note 2)

VDS = 15 V, VGS = 0 V,

f = 1.0 MHz

VGS = 15 mV, f = 1.0 MHz

td(on)

tr

Turn–On Delay Time

Turn–On Rise Time

VDD = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

td(off)

Turn–Off Delay Time

tf

Turn–Off Fall Time

Qg(TOT)

Total Gate Charge at Vgs=10V

VDD = 15 V, ID = 6.3 A,

Qg(TOT)

Total Gate Charge at Vgs=5V

Qgs

Gate–Source Charge

Qgd

Gate–Drain Charge

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2)

trr

Diode Reverse Recovery Time

IF = 6.3 A, dIF/dt = 100 A/µs

Qrr

Diode Reverse Recovery Charge

Min Typ Max Units

30

23

V

mV/°C

1

µA

10

±100

nA

1

1.9

3

– 4.1

V

mV/°C

20

25

mΩ

26

33

27

45

20

S

570

pF

140

pF

70

pF

2.1

Ω

8

16

ns

4

8

ns

22

35

ns

3

6

ns

10

15

nC

6

8

nC

1.7

nC

2.1

nC

1.3

A

0.8 1.2

V

18

ns

9

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

2

FDC655BN Rev. C(W)

www.fairchildsemi.com

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