FDC655BN 查看數據表（PDF） - Fairchild Semiconductor
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FDC655BN Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 6.3A
8
6
VDS = 10V
20V
15V
4
2
0
0
2
4
6
8
10
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100 µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10.0V
0.1 SINGLE PULSE
R JA = 156 oC/W
TA = 25 oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
VGS = 0 V
600
Ciss
400
Coss
200
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
SINGLE PULSE
R JA = 156°C/W
4
TA = 25°C
3
2
1
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R JA(t) = r(t) * R JA
R JA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDC655BN Rev. C(W)
www.fairchildsemi.com
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