FDFMA2P859T 查看數據表（PDF） - Fairchild Semiconductor

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FDFMA2P859T

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

Fairchild Semiconductor 

Electrical Characteristics TA = 25 °C unless otherwise noted

Notes:

1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the

user's board design.

(a) MOSFET RTJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

(b) MOSFET RTJA = 173 oC/W when mounted on a minimum pad of 2 oz copper.

(c) Schottky RTJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

(d) Schottky RTJA = 140 oC/W when mounted on a minimum pad of 2 oz copper.

a)86 oC/W when

mounted on a 1

in2 pad of 2 oz

copper.

b)173 oC/W when

mounted on a

minimum pad of 2

oz copper.

c)86 oC/W when

mounted on a 1

in2 pad of 2 oz

copper.

d)140 oC/W when

mounted on a

minimum pad of 2

oz copper.

2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

©2009 Fairchild Semiconductor Corporation

3

FDFMA2P859T Rev.B

www.fairchildsemi.com

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