FDFMA2P859T 查看數據表（PDF） - Fairchild Semiconductor
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FDFMA2P859T Datasheet PDF : 8 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = -4.5 V
5
VGS = -2 V
4
VGS = -3.5 V
3
VGS = -3 V
VGS = -1.8 V
VGS = -2.5 V
2
1
VGS = -1.5 V
PULSE DURATION = 300 Ps
DUTY CYCLE = 2% MAX
0
0
0.5
1.0
1.5
2.0
2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 300 Ps
DUTY CYCLE = 2%MAX
2.5
VGS = -1.5 V
2.0
VGS = -1.8 V
VGS = -2 V
1.5
VGS = -2.5 V
1.0
0.5
0
VGS = -3 V VGS = -3.5 V VGS = -4.5 V
1
2
3
4
5
6
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
ID = -3.0 A
1.3 VGS = -4.5 V
1.2
1.1
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
0.28
0.24
0.20
PULSE DURATION = 300 Ps
DUTY CYCLE = 2% MAX
ID = -1.5 A
0.16
0.12
TJ = 125 oC
0.08
0.04
0
TJ = 25 oC
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
6
PULSE DURATION = 300 Ps
5 DUTY CYCLE = 2% MAX
VDS = -5 V
4
3
2
TJ = 125 oC
TJ = 25 oC
1
TJ = -55 oC
0
0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
VGS = 0 V
1
TJ = 125 oC
0.1
0.01
TJ = 25 oC
0.001
TJ = -55 oC
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
4
FDFMA2P859T Rev.B
www.fairchildsemi.com
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