FDFMA2P859T 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDFMA2P859T Datasheet PDF : 8 Pages
| |||
Typical Characteristics TJ = 25 °C unless otherwise noted
5
ID = -3.0 A
4
3
2
1
VDD = -5 V
VDD = -10 V
VDD = -15 V
0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
700
600
500
Ciss
400
300
200
Coss
100
f = 1 MHz
VGS = 0 V
Crss
0
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10
100 us
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1 SINGLE PULSE
TJ = MAX RATED
RTJA = 173 oC/W
TA = 25 oC
0.01
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
10 ms
100 ms
1s
10 s
DC
50
Figure 9. Forward Bias Safe
Operating Area
10
TJ = 125 oC
1
0.1
TJ = 25 oC
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VF, FORWARD VOLTAGE (V)
Figure 10. Schottky Diode Foward Voltage
10000
1000
100
10
1
0.1
0.01
0
TJ = 125 oC
TJ = 85 oC
TJ = 25 oC
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 11. Schottky Diode Reverse Current
200
100
VGS = -10 V
SINGLE PULSE
10
RTJA = 173 oC/W
TA = 25 oC
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
5
FDFMA2P859T Rev.B
www.fairchildsemi.com
Share Link: 