FDH20N40 查看數據表（PDF） - Fairchild Semiconductor
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FDH20N40 Datasheet PDF : 6 Pages
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Typical Characteristics
100
TC = 25oC
VGS DESCENDING
10V
7V
6.5V
6V
5.5V
10 5V
100
TC = 175oC
VGS DESCENDING
10V
7V
6.5V
6V
5.5V
10 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 50V
30
20
TJ = 175oC
TJ = 25oC
10
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
1000
100
CISS
COSS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
3.0
PULSE DURATION = 80µs
2.5
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
VGS = 10V, ID = 10A
0.0
-50 -25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
15
ID = 20A
10
200V
80V
320V
10
CRSS
VGS = 0V, f = 1MHz
1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source Voltage
5
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms For Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
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