FDM606P 查看數據表（PDF） - Fairchild Semiconductor
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FDM606P Datasheet PDF : 6 Pages
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Typical Characteristic (Continued) TA = 25°C unless otherwise noted
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
16
VDD = 15V
12
8
TJ = 25oC
4
TJ = 150oC
TJ = -55oC
0
1.0
1.5
2.0
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
VGS = -4.5V
16
12
8
VGS = -2.5V
VGS = -2V
VGS = -1.8V
4
0
0
PULSE DURATION = 80µs
TA = 25oC DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Saturation Characteristics
60
PULSE DURATION = 80µs
ID = -6.8A
DUTY CYCLE = 0.5% MAX
50
40
ID = -1A
30
20
1
2
3
4
5
6
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.25
1.00
0.75
-80
VGS = -4.5V, ID = -6.8A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.25
VGS = VDS, ID = 250µA
1.10
ID = 250µA
1.05
1.00
1.00
0.75
0.95
0.50
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,
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