FDN5618P 查看數據表（PDF） - Fairchild Semiconductor
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FDN5618P Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -1.25A
8
6
4
2
0
0
2
VDS = -20V
-40V
-30V
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
0.1
0.01
VGS =-10V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.001
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
1ms
100
Figure 9. Maximum Safe Operating Area.
700
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
2
4
6
8
10
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN5618P Rev C(W)
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