FDP150N10A_F102 查看數據表（PDF） - Fairchild Semiconductor
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FDP150N10A_F102 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.08
1.04
1.00
0.96
0.92
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
300
100
10μs
100μs
10
1ms
1 Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
100 200
Figure 11. Eoss vs. Drain to Source Voltage
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
VDS, Drain to Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
-100
*Notes:
1. VGS = 10V
2. ID = 50A
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
60
VGS = 10V
50
40
30
20
10
RθJC = 1.6oC/W
0
25
50
75 100 125 150 175
TC, Case Temperature [oC]
Figure 12. Unclamped Inductive
Switching Capability
20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
1000
©2011 Fairchild Semiconductor Corporation
4
FDP150N10A Rev. C1
www.fairchildsemi.com
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