FDS3572 查看數據表（PDF） - Fairchild Semiconductor
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FDS3572 Datasheet PDF : 11 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
80
VDS = 60V
VGS = 0V
-
TA = 150oC -
VGS = ±20V
-
Typ Max Units
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 8.9A, VGS = 10V
ID = 5.6A, VGS = 6V
ID = 8.9A, VGS = 10V,
TA= 150oC
2
-
4
V
-
0.014 0.016
-
0.019 0.029
Ω
-
0.027 0.032
Dynamic Characteristics
CISS
COSS
CRSS
Qg(tot)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
-
1990
-
pF
-
320
-
pF
-
85
-
pF
VGS = 0V to 10V
-
VGS = 0V to 2V VDD = 40V
-
ID = 8.9A
-
Ig = 1.0mA
-
31
41
nC
4
5.2
nC
9
-
nC
5
-
nC
-
7.5
-
nC
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 40V, ID = 8.9A
VGS = 10V, RGS = 10Ω
-
-
40
ns
-
13
-
ns
-
14
-
ns
-
31
-
ns
-
13
-
ns
-
-
67
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 8.9A
-
ISD = 4.3A
-
ISD= 8.9A, dISD/dt= 100A/µs
-
ISD= 8.9A, dISD/dt= 100A/µs
-
-
1.25
V
-
1.0
V
-
50
ns
-
70
nC
Notes:
1: Starting TJ = 25°C, L = 21mH, IAS = 7A.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
RθJA
ipsinmse. aRsuθJreCdiswgituha1ra.0ntiene2dcobpypdeersoignnFwRh-4ilebRoaθJrdA
is determined by the user’s board design.
©2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
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