FDS6675BZ 查看數據表（PDF） - Fairchild Semiconductor
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FDS6675BZ Datasheet PDF : 6 Pages
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FDS6675BZ
P-Channel PowerTrench® MOSFET
-30V, -11A, 13mΩ
July 2008
tm
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 5.4 KV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handing capability
RoHS Compliant
D
D
D
D
5
4
6
3
G
7
2
SO-8
SS
S
8
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
PD
TJ, TSTG
Operating and Storage Temperature
(Note 1b)
(Note 1c)
Ratings
-30
±25
-11
-55
2.5
1.2
1.0
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50
°C/W
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6675BZ
Device
FDS6675BZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS6675BZ Rev. B1
www.fairchildsemi.com
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