FDS6986AS 查看數據表（PDF） - Fairchild Semiconductor
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FDS6986AS Datasheet PDF : 10 Pages
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
Qg(TOT) Total Gate Charge, Vgs = 10V
Q2
Q1
Qg
Total Gate Charge, Vgs = 5V
Q2:
VDS = 15 V, ID = 7.9 A
Q2
Q1
Qgs
Gate-Source Charge
Q1:
Q2
Qgd
Gate-Drain Charge
VDS = 15 V, ID = 6.5 A
Q1
Q2
Q1
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Trr
Reverse Recovery Time
IF = 10 A,
Qrr
Reverse Recovery Charge
diF/dt = 300 A/µs
Q2
(Note 3)
Trr
Reverse Recovery Time
IF = 6.5 A,
Qrr
Reverse Recovery Charge
diF/dt = 100 A/µs
Q1
(Note 3)
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
(Note 2)
Q2
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
Q1
10 14
nC
12 17
5.6 8
nC
6.5 9
2.0
nC
2.3
1.5
nC
2.1
3.0
A
1.3
15
ns
6
nC
20
ns
12
nC
0.6 0.7
V
0.8 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label.
FDS6986AS Rev A (X)
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