FDS8935 查看數據表（PDF） - Fairchild Semiconductor

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FDS8935

Dual P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

IDSS

IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ID = -250 μA, VGS = 0 V

-80

V

ID = -250 μA, referenced to 25 °C

-61

mV/°C

VDS = -64 V, VGS = 0 V

VGS = ±20 V, VDS = 0 V

-1

μA

±100 nA

On Characteristics

VGS(th)

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS

Forward Transconductance

VGS = VDS, ID = -250 μA

-1

ID = -250 μA, referenced to 25 °C

VGS = -10 V, ID = -2.1 A

VGS = -4.5 V, ID = -1.9 A

VGS = -10 V, ID = -2.1 A,TJ = 125 °C

VDS = -10 V, ID = -2.1 A

-1.8

-3

V

5

mV/°C

148 183

176

247

mΩ

249 308

6.4

S

Dynamic Characteristics

Ciss

Coss

Crss

Rg

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = -40 V, VGS = 0 V,

f = 1MHz

661 879

pF

47

63

pF

24

36

pF

6

Ω

Switching Characteristics

td(on)

tr

td(off)

tf

Qg(TOT)

Qg(TOT)

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = -40 V, ID = -2.1 A,

VGS = -10 V, RGEN = 6 Ω

VGS = 0 V to -10 V

VGS = 0 V to -5 V VDD = -40 V,

ID = -2.1 A

5

10

ns

3

10

ns

22

36

ns

3

10

ns

13

19

nC

7

10

nC

1.6

nC

2.6

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0 V, IS = -2.1 A

VGS = 0 V, IS = -1.3 A

(Note 2)

(Note 2)

-1.8 -1.3

V

-0.8 -1.2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF = -2.1 A, di/dt = 300 A/μs

19

30

ns

34

54

nC

NOTES:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a)78 °C/W when

mounted on a 1 in2

pad of 2 oz copper

b)135 °C/W when

mounted on a

minimun pad

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V.

©2010 Fairchild Semiconductor Corporation

2

FDS8935 Rev.C

www.fairchildsemi.com

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